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ზურა ჯიბუტი

პოზიცია: პროფესორი

ელფოსტა: z.jibuti@agruni.edu.ge

 

განათლება

2006წ. ე.ანდრონიკაშვილის სახ. ფიზიკის ინსტიტუტი. ფიზიკა- მათემატიკურ მეცნიერებათა დოქტორი 
1990წ. ივ. ჯავახიშვილის სახ.თბილისის სახ. უნივერსიტეტი ფიზიკა- მათემატიკურ მეცნიერებათა კანდიდატი
1972–1977წ. ივ. ჯავახიშვილის სახ. თბილისის სახ. უნივერსიტეტი ფიზიკის ფაკულტეტი,წარჩინებით, სპეციალობა ფიზიკა, კვალიფიკაცია მყარი სხეულების ფიზიკა

 

ფიზიკა 1 
ფიზიკა 2 
სპეც. ფიზიკა 

 

პუბლიკაციების ჩამონათვალი

რჩეული პუბლიკაციები

  1. A.P.Bibiblashvili, Z.I.Jibuti,N.D.Dolidze. Studying the Ar+ - and He+ -ions implanted SOI structures. Proc. of 2nd International Conference “Nanotechnologies”, Nano-2012. Tbilisi, Georgia, 2012, pp.155-159.
  2. А.П.Бибилашвили,Д.Т.Беришвили, З.В.Джибути, Н.Д.Долидзе,Г.А.Схиладзе. Разработка низкотемпературной технологии формирования свехтонких оксидных пленок. Proc. of VI International scientific conference “Physical and chemical principles of formation and modification micro- and nanostructures“ (FMMN-2012), Kharkov, Ukraine, 0ctober, 2012.p. 87-91.
  3. З.В.Джибути, Н.Д.Долидзе, Г.Л.Эристави. Экситонно плазменный резонанс в полупроводниковых сверхтонких слоях.// j. Nanostudies, 55-60, 2012.
  4. A.P.Bibiblashvili, Z.I.Jibuti,N.D.Dolidze.Investigation of SOS Structures Implanted With Ions Ar+ and He+. “Basic Paradigms in Science and Techno-logy Development for The 21st Century”. Transactions, v.1. Tbilisi, Georgia, 2012, pp. 369-372.
  5. A.B.Bibilashvili, Z.V.Jibuti, N.D.Dolidze. Influence of an Irradiation on Parameters of the NO and NC MESFET on GaAs.Proc. of V International scientific conference “Physical and chemical principles of formation and modification micro- and nanostructures“ (FMMN-2011), Kharkov, Ukraine, 0ctober, 2011.p.20-24.
  6. Z.V.Jibuti, N.D.Dolidze and B.E.Tsekvava. The Electronic Mechanism of Melting of Semiconductor Materials. // New Developments in Material Science, New Science publishers, Inc. New York, 2011, 43-54.
  7. N.D.Dolidze, Z.V.Jibutiand B.E.Tsekvava.Identification and Model of Divacancy in Ge and GaAs. // New Developments in Material Science, New Science publishers, Inc. New York, 2011, 55-66.
  8. З.В.Джибути.Цветотерапия в современной медицине // Abstracts of International Scientific Conference: “Physical Research Methods in Medicine”, 2011, Tbilisi, Georgia, p.61-62.
  9. З.В.Джибути. Применение импульсного фотонного отжига в технологиях микро и наноэлектроники. // Proceedings of International Scientific Conference: “Modern Issues of Applied Physics”, 2011, Tbilisi, Georgia, p.293-296.
  10. А.В.Гигинеишвили,З.В.Джибути,Н.Д.Долидзе,Г.И.Илуридзе,Т.А.Минашвили. Оптические методы исследования физических свойств материалов микро и наноэлектроники. // Proceedings of International Scientific Conference: “Modern Issues of Applied Physics”, 2011, Tbilisi, Georgia, p.39-41.
  11. Z.V.Jibuti. Photostimulated process in technologies of a nanoelectronics. // 2011, J. Nano studies, v.4, pp.73-78.
  12. A.Gigineishvili, Z.Jibuti, N.Dolidze, G.Iluridze, T.Minashvili . Optical methods of researches of physical properties of nanomaterials. // 2011, J. Nano studies,v.4,pp.55-58.
  13. Z.V. Jibuti, N. D. Dolidze. Method of an estimation of intensity of irradiated of filament lamp depending on spectral structure for photon annealing of nanostructure. // 2011, J. Nano studies.v.4,pp.59-66.
  14. Z.V. Jibuti, N. D. Dolidze, G.L.Eristavi.Exciton-plasma resonance in semiconductor superthin layers . // 2011, J. Nano studies,v.4.pp.67-72.
  15. N.Dolidze, Z.Jibuti. Low temperature puls-photon annealing in modern nano electronics;physical mechanisms,technologies.//Proceedings of Papers of the First International Conference Nanochemistry and Nanotechnologies (NANO-2010). Tbilisi, Georgia, 2011, 224-227.
  16. N.Dolidze, Z.Jibuti. Elaboraiton of nondestructive technigues of definition of the nature and size of internal mechanical pressures in micro and nano films, development of methods of their minimization.//Proceedings of Papers of the First International Conference Nanochemistry and Nanotechnologies (NANO-2010). Tbilisi, Georgia, 2011, 228–231.
  17. Z.Jibuti (EC FP7 EXTEND project IT organizations       scientific adviser).// Conference “The way forward for the information society in the Eastern Europe and south Cauasus countries: Priorities and Challenges.” 16-17 June 2011, Tbilisi, Georgia.
  18. N.Dolidze, Z.Jibuti. Mechanism of low-temperature melting of semiconductor micro and nanomaterials. // Programme & Abstracts ISTC International Scientific Conference: “International Cooperation for Sustainable Development through Science and Technology”, 2011, Tbilisi, Georgia, p. 26-27.
  19. А.В.Гигинеишвили,З.В.Джибути,Н.Д.Долидзе,Г.И.Илуридзе,Т.А.Минашвили. Оптические методы исследования физических свойств материалов микро и наноэлектроники. // Abstract Digest International Scientific Conference: “Modern Issues of Applied Physics”, 2011, Tbilisi, Georgia, p. 21-22.
  20. З.В.Джибути. Применение импульсного фотонного отжига в технологиях микро и наноэлектроники. // Abstract Digest International Scientific Conference: “Modern Issues of Applied Physics”, 2011, Tbilisi, Georgia, p. 119 - 120.
  21. D.Daraselia,D.Japaridze,Z.Jibuti,A.Shengelaia    Synthesis of La2-xBaxCuO4 High-Temperature Superconductor by Means of Photostimulated Solid State Reaction.Bull. Georg. Natl. Acad.Sci., 2011,Vol. 5, No. 1, p. 116-118.
  22. З.В.Джибути.Цветотерапия в современной медицине // Proceedings of International Scientific Conference: “Physical Research Methods in Medicine”, 2011, Tbilisi, Georgia, p.137-139.
  23. N.D.Dolidze, Z.V.Jibuti, B.E.Tsekvava. To the Non-Thermal Mechanism of Melting of Thin Layers of Semiconductors. // J. Nano Studies, 2010, 1(1),p.p. 161-165.
  24. N.D.Dolidze, Z.V.Jibuti, G.S.Narsia, G.L.Eristavi. About Nature of Deformation Pressure in Germanium Thin layers Implanted by B+ Ions. / 2010, J. Nano studies, 1(1), 167-171.
  25. n.doliZe, z.jibuti. dabaltemperaturuli impulsuri fotonuri gamowva Tanamedrove nanoeleqronikaSi; fizikuri meqanizmebi, teqnologiebi. // pirveli sarTaSoriso konferenciis Tezisebis krebuli, “nano-2010-NANO”, Tbilisi, saqarTvelo, 2010, 53.
  26. n.doliZe, z.jibuti. mikro da nano firebSi meqanikuri daWimulobebis bunebisa da sididis gansazRvris aramrRvevadi meTodikebis SemuSaveba, maTi minimizaciis meTodebis Seqmna. // pirveli sarTaSoriso konferenciis Tezisebis krebuli, “nano-2010”, Tbilisi, saqarTvelo, 2010, 52.
  27. Z.V. Jibuti., N.D. Dolidze. To Model of Divacancy in Gallium Arsenide. // Proc. of the Fourth International scientific conference “Physical and chemical principles of formation and modification of micro- and nanostructures“ (FMMN-2010), Kharkov, Ukraine, 2010. p. 130-133.
  28. Z.V. Jibuti. Direct observation of athermally character of melting of the semiconductor at pulse laser annealing. // Proc. of the Fourth International scientific conference “Physical and chemical principles of formation and modification of micro- and nanostructures“ (FMMN-2010), Kharkov, Ukraine, 2010. p. 134-137 .
  29. Z.Jibuti (EC FP7 EXTEND project IT organizations       scientific adviser).// IncoNet EECA Project ‘S&T International Cooperation Network for Eastern European and Central Asian Countries’ Funded under the EU Seventh Framework Programme Workshop in the Thematic Priority of FP7 “Information and Communication Technologies: Nanoelectronics Technologies and Photonics” May 17-18, 2010, Minsk, Republic of Belarus.
  30. Z.Jibuti (EC FP7 EXTEND project IT organizations       scientific adviser).// EXTEND Project – “Fostering scientific and research co-operation between the Eastern Europe and Southern Caucasus countries and the EU”, July 1-2, 2010, Tbilisi, Georgia.
  31. Z.Jibuti (EC FP7 EXTEND project IT organizations       scientific adviser).// “Georgian Competitiveness” Raundtable How Can Georgian Scientific Developments Make Georgia More Competitive in the World, STCU, October 27-28, 2010, Tbilisi, Georgia.
  32. Z.Jibuti (EC FP7 EXTEND project IT organizations       scientific adviser).// 2nd EXTEND Training Workshop. November 18-19, 2010, Tbilisi, Georgia.
  33. Z.Jibuti (EC FP7 EXTEND project IT organizations       scientific adviser).// Семинар УНТЦ – «Права интеллектуальной собственности и коммерциализация результатов научно-исследовательской деятельности , опыт Украины и США». Декабрь 17, 2010, Тбилиси,Грузиа.
  34. Z.V.Jibuti, N.D.Dolidze. The Electronic Mechanism of Melting of Semiconductor Materials. // Abstracts Int. Conf. “Material Science Days”, Tbilisi, Georgia, 2009,p. 41.
  35. N.D.Dolidze, Z.V.Jibuti. Identification and Model Divacancy in Ge and GaAs. // Abstracts Int. Conf. “Material Science Days”, Tbilisi, Georgia, 2009, p.42.
  36. A.Bibilashvili, N.Dolidze, Z.Jibuti. Investigation of Low-Frequency Photocurrent Oscillations in GaAs Irradiated by Electrons. // Georgian Electronic Scientific Journal (GESJ):Physics,2009,#1(1),p.54-57.
  37. N.Dolidze, G.Eristavi, Z.Jibuti. Investigation of Photo-Stimulated Diffusion Processes in III-V Semiconductors. // Georgian Electronic Scientific Jornal (GESJ): Physics 2009 #1(1),72-75.).
  38. N.Dolidze, G.Eristavi Z.Jibuti. Investigation of Small Dose Radiation Stimulated Processes in Semiconductor Materials and Structures. // Georgian Electronic Scientific Jornal (GESJ): Physics 2009 # 2(2), 61-64.
  39. N.Dolidze, G.Eristavi Z.Jibuti. Refining of Semiconductor Materials and Structures Using Radiation-Annealing Cycles // Proc. of the International Scientific Conference “Physical and chemical principles of formation and modification of micro- and nanostructures“ (FMMN-2009), Kharkov, Ukraine, 2009, v.1, p. 196-199.
  40. N. D. Dolidze, Z. V. Jibuti, B. E. Tsekvava. The Electronic Mechanism of Low-Temperature Melting of Semiconductors // Proc. of the International Scientific Conference “Physical and chemical principles of formation and modification of micro- and nanostructures“ (FMMN-2009), Kharkov, Ukraine, 2009, v.2, p. 484-489.
  41. Z.Jibuti (EC FP7 EXTEND project IT organizations       scientific adviser). Photo-Stimulated Technology processes in nanoelectronics. // Int. Conf. “Fostering scientific and sesearch so-operation between the Eastern Europe and Southern Caucasus countries and the EU”, Chisinau, Republic of Moldova, june 2009.
  42. A.Bibilashvili, N.Dolidze, Z.Jibuti, R.Melkadze, G.Eristavi. Investigation of the Photostimulated Crystallization and Relaxation of Internal Mechanical Pressure in Silicon-on- Insulator Epitaxial Nanostructures . // J. Nanotechnology Perceptions,2008,4,29-34,N25B107A. http://pages.unibas.ch/colbas/ntp/ToCV4(1).pdf
  43. Z.V. Jibuti, N. D. Dolidze, G.Eristavi. Photostimulated relaxation of internal mechanical stresses in epitaxial SOS –structures. // Technical Physics,2008, Vol. 53, No. 6, p.808-810 .
  44. N.Dolidze, Z.Jibuti. The Athermal Melting of Superficial Layers of Semiconductors by Using of Pulse Laser Influence. // Abstract Digest Conference Holographic and optical recording, storage and processing of information. “HOLOOPTO 2008”, Tbilisi,Georgia, 2008, p.91-93.
  45. z.jibuti, n.doliZe. naxevargamtaruli masalebis dnobis eleqtronuli meqanizmi. // Tezisebis krebuli ivანე javaxiSvilis saxelobis Tbilisis saxelmwifo universitetis 90-e wlisTavisadmi miZRvnili samecniero konferencia fizikaSi, Tbilisi, 2008, 20-21.
  46. n.doliZe, z.jibuti. Ge da GaAs-Si divakansiis identifikacia da modeli. // Tezisebis krebuli ivანე javaxiSvilis saxelobis Tbilisis saxelmwifo universitetis 90-e wlisTavisadmi miZRvnili samecniero konferencia fizikaSi, Tbilisi, 2008, 22-23.
  47. Z.V. Jibuti, N. D. Dolidze, G.Sh.Narsia, G.L.Eristavi. About the Nature of Deformation Pressure in Germanium Implanted by B+ Ions. // Proc. of the International scientific conference “Physical and chemical principles of formation and modification of micro- and nanostructures“ (FMMN-2008), Kharkov, Ukraine, 2008, v.2, p. 399-402.
  48. A.Bibilashvili, Z.Jibuti, N.Dolidze. Low-Temperature Laser Annealing of Radiation Defects in Gallium Arsenide Irradiated by Electrons. // Proc. of International scientific conference “Physical and chemical principles of formation and modification of micro- and nanostructures“ (FMMN-2008), Kharkov, Ukraine, 2008, v.2, p. 403-405.
  49. Z. V. Jibuti, N. D. Dolidze, B. E. Tsekvava. To the mechanism of pulse laser annealing of a surface layers of semiconductors. // Proc. of the International scientific conference, “Physical and chemical principles of formation and modification of micro- and nanostructures“ (FMMN-2007)Kharkov, Ukraine, 2007, 137-139.
  50. Z. V. Jibuti, N. D. Dolidze, B. E. Tsekvava, G.Eristavi. Influence of pulse photon treatment on deformation mechanical pressure in epitaxial structures. // Proc. of the International scientific conference “Physical and chemical principles of formation and modification of micro- and nanostructures“ (FMMN-2007), Kharkov, Ukraine, , 2007, 134-136.
  51. A.Bibilashvili, N.Dolidze, Z.Jibuti, R.Melkadze, G.Eristavi. Investigation of Photostimulated Crystallization and Relaxation of Internal Mechanical Pressure in the Epitaxial Nanp-structures “Si on Insulator.” Abstracts International Conference - “Spin Electronics: Novel Physical Phenomenon and Materials”( Spin Electronics 07 ), Tbilisi, Georgia , 2007, p.85.
  52. S. A. Avsarkisov, Z. V. Jibuti, N. D. Dolidze*, and B. E. Tsekvava. Laser Stimulated Low-Temperature Crystallization of Amorphous Silicon. // Technical Physics Letters, 2006, Vol. 32, No. 3, pp. 259–261.
  53. z.jibuti. kovalentur da Sereul bmebian naxevargamtarebSi defeqtebis impulsuri fotonuri gamowvis meqanizmebi. fizika-maTematikis mecnierebaTa doqtoris samecniero xarisxis mosapoveblad warmodgenili disertaciis avtoreferati. Tbilisi, 2006, 44 gv.
  54. N.D.Dolidze, Z.V.Jibuti, V.N.Mordkovich*, B.E.Tsekvava. On the Electronic Mechanism of Melting of Semiconductors. // Georgian Engineering news (GEN), 2005, №4, p.84-87.
  55. n.doliZe, z.jibuti. impulsuri fotonuri procesebi naxevargamtarul eleqtronikaSi. // samecniero konferenciis “fotonika - 2005” moxsenebebis Tezisebi, Tbilisi, 2005, 10-11.
  56. N.Dolidze, Z.Jibuti, M.Pkhakadze, N.Sikhuashvili. Low-temperature laser annealing of radiation defects in n-GaAs. Bulletin of the Georgian Academy of Sciences, v.169, N3 , 2004, 488-490.
  57. Z.Jibuti, N.Dolidze, M.Pkhakadze, M.Kuprava, N.Sikhuashvili, I.Shiryapov. Pulse-photon annealing of silicon implanted by ions Ar+. Bulletin of the Georgian Academy of Sciences, 2004,v.170, N1 , p. 63-64.
  58. Z. V. Jibuti, N. D. Dolidze, N.Sikhuashvili, and G. L. Eristavi . The effect of Neutron Irradiation on the Microhardness of Gallium Arsenide. // Technical Physics Letters, 2004, Vol. 30, 9, pp. 730-731.
  59. Z. V. Jibuti, N. D. Dolidze, B. E. Tsekvava, and G. L. Eristavi. The Effect of Neutron Irradiation on the Exciton Absorption in Gallium Arsenide. // Technical Physics Letters, 2003,Vol. 29,7, pp. 540-541
  60. А.П.Бибилашвили, А.Б.Герасимов, З.В.Джибути, Н.Д.Долидзе, Р.Э.Казаров, М.А.Куправа. О возможности понижения температур процессов в технологии изготовления полупроводниковых приборов на основе SiC. // Труды четвёртой международной научно-технической конференции “Микроэлектронные преобразователи и приборы на их основе”. МЭПП-2003, Баку-Сумгаит,2003, 80-81.
  61. З.В.Джибути, Н.Д.Долидзе, Г.Л.Эристави, Т.Н.Бахия, В.С.Авсаркисова-Сидамонидзе. Влияние нейтронного и электронного облучения на механические свойства арсенида галлия. // Труды четвёртой международной научно-технической конференции “Микроэлектронные преобразователи и приборы на их основе”. МЭПП-2003, Баку-Сумгаит, 2003, 203-204.
  62. З.В.Джибути, Н.Д.Долидзе, М.А.Куправа, М.Г.Пхакадзе. Исследование механизма импульсного-фотонного отжига радиационных дефектов в кремнии. // Труды четвёртой международной научно-технической конференции “Микроэлектронные преобразователи и приборы на их основе”. МЭПП-2003, Баку-Сумгаит, 2003, 206-207.
  63. M. Djibladze, N.Dolidze, Z.Jibuti. Investigation of kinetics of laser Annealing of semiconductor materials using regular giant pulses. Proc. of the International Conference of Laser Optics-2003, p.204-207, St-Petersburg, 2003.
  64. N.Dolidze, G.Eristavi, Z.Jibuti.The low temperature perspective radiation technology in the semiconductor electronics. // “Metsniereba da Technologiebi”(“Science and Technologies”) Monthly Scientific-Reviewed Magazine of Georgian Academy of Sciences, 2002,№4-6,20-27.
  65. N.Dolidze, G.Eristavi, , Z.Jibuti, B.Tsekvava. Charge State of Radiation Defects Created by Electron Radiation in GaAs. // Bulletin of the Georgian Academy of Sciences, 2002, v.166,N3, 259-262.
  66. Z. V. Dzhibuti and N. D. Dolidze. On the Properties of a Radiation-Induced Defect Responsible for the 1.0-eV IR Absorption Band in Gallium Arsenide. // Technical Physics Letters ,2001,Vol.27, 12, pp. 1008-1009
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